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TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC

Anterwell Technology Ltd.
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    Buy cheap TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC from wholesalers
     
    Buy cheap TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC from wholesalers
    • Buy cheap TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC from wholesalers

    TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC

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    Brand Name : Anterwell
    Model Number : TLP251F
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8200pcs
    Delivery Time : 1 day
    • Product Details
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    TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC


    TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

    TLP251F


    Inverter for Air Conditioner

    Induction Heating

    Transistor Inverter

    Power MOSFET Gate Drive

    IGBT Gate Drive


    The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector.

    This unit is 8−lead DIP package.


    TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A)


    • Input threshold current: IF = 5mA (max.)

    • Supply current: 11mA (max.)

    • Supply voltage: 10~35V

    • Output peak current: ±0.4A (max.)

    • Switching time: tpHL, tpLH = 1μs (max.)

    • Isolation voltage: 2500Vrms(min.)


    • UL recognized: UL1577, file no. E67349

    • Option (D4) type VDE approved:

    DIN EN 60747-5-2, certificate no. 40011913

    Maximum operating insulation voltage: 1140VPK

    Highest permissible over voltage: 6000VPK


    (Note 1) When a EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ”


    • Structural parameter

    Creepage distance: 8.0mm (min.)

    Clearance: 8.0mm (min.)



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