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INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier

Anterwell Technology Ltd.
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    Buy cheap INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier from wholesalers
     
    Buy cheap INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier from wholesalers
    • Buy cheap INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier from wholesalers

    INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier

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    Brand Name : Anterwell
    Model Number : INA-03184
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8200pcs
    Delivery Time : 1 day
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    INA-03184 Integrated Circuit Chip Cascadable Silicon Bipolar MMIC Amplifier


    Low Noise, Cascadable Silicon Bipolar MMIC Amplifier INA-03184


    Features

    • Cascadable 50 Ω Gain Block

    • Low Noise Figure: 2.6 dB Typical at 1.5 GHz

    • High Gain: 25 dB Typical at 1.5 GHz

    • 3 dB Bandwidth: DC to 2.5 GHz

    • Unconditionally Stable (k>1)

    • Low Power Dissipation: 10 mA Bias

    • Low Cost Plastic Package

    Description
    The INA-03184 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) Typical Biasing Configuration Cblock Cbypass1 (Optional) Cblock Rbias VCC Vd = 4.0 V (Nominal) RFC (Optional) RF IN RF OUT 4 1 2 3 Note: 1. VSWR can be improved by bypassing a 100–120 Ω bias resistor directly to ground. See AN-S012: Low Noise Amplifiers. feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth commercial and industrial applications that require high gain and low noise IF or RF amplification with minimum power consumption.

    The INA series of MMICs is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, ISOSAT™-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.


    Typical Biasing Configuration

    Note: 1. VSWR can be improved by bypassing a 100–120 Ω bias resistor directly to ground. See AN-S012: Low Noise Amplifiers.


    84 Plastic Package


    Absolute Maximum Ratings

    ParameterAbsolute Maximum[1]
    Device Current25 mA
    Power Dissipation[2]200 mW
    RF Input Power+13 dBm
    Junction Temperature150°C
    Storage Temperature–65 to 150°C

    Notes:

    1. Permanent damage may occur if any of these limits are exceeded.

    2. Derate at 10 mW/°C for TC > 130°C.


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