CA3045, CA3046

General Purpose NPN Transistor Arrays

The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair.

The transistors of the CA3045 and CA3046 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. However, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

Features

• Two Matched Transistors

- V_BE Match . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV

- I_IO Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2µA (Max)

• Low Noise Figure . . . . . . . . . . . . . . . . 3.2dB (Typ) at 1kHz

• 5 General Purpose Monolithic Transistors

• Operation From DC to 120MHz

• Wide Operating Current Range

• Full Military Temperature Range

Applications

• Three Isolated Transistors and One Differentially Connected Transistor Pair for Low Power

Applications at Frequencies from DC Through the VHF Range

• Custom Designed Differential Amplifiers

• Temperature Compensated Amplifiers

• See Application Note, AN5296 “Application of the CA3018 Integrated-Circuit Transistor Array”

for Suggested Applications

Pinout

Absolute Maximum Ratings

Collector-to-Emitter Voltage (V_CEO) . . . . . . . . . . . . . . . . . . . . . 15V

Collector-to-Base Voltage (V_CBO) . . . . . . . . . . . . . . . . . . . . . . . 20V

Collector-to-Substrate Voltage (V_CIO, Note 1) . . . . . . . . . . . . . . 20V

Emitter-to-Base Voltage (V_EBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current (I_C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

NOTES: 1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.

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