Optical Integrated Circuit Chip High Precision Dual Operational
Amplifiers
TLC27L2C PLincmose Precision Dual Operational Amplifiers ESD-Protection
Circuitry
Trimmed Offset Voltage: TLC27L7 . . . 500 µV Max at 25°C, VDD = 5
V
Input Offset Voltage Drift . . . Typically 0.1 µV/Month, including
the First 30 Days
Wide Range of Supply Voltages Over Specified Temperature Range: 0°C
to 70°C . . . 3 V to 16 V –40°C to 85°C . . . 4 V to 16 V –55°C to
125°C . . . 4 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range Extends Below the Negative Rail
(C-Suffix, I-Suffix Types)
Ultra-Low Power...Typically 95 µW at 25°C, VDD = 5 V
Output Voltage Range includes Negative Rail
High Input Impedance . . . 1012 Ω Typ
ESD-Protection Circuitry Small-Outline Package Option Also
Available in Tape and Reel Designed-In Latch-Up immunity
description
The TLC27L2 and TLC27L7 dual operational amplifiers
combine a wide range of input offset voltage grades with low
offset voltage drift, high input impedance, extremely low
power, and high gain.
These devices use Texas Instruments silicon-gate LinCMOS
technology, which provides offset voltage stability far exceeding
the stability available with conventional metal-gate processes.
The extremely high input impedance, low bias currents, and low
power consumption make these cost-effective devices ideal for high
gain, low frequency, low power applications. Four offset voltage
grades are available (C-suffix and I-suffix types), ranging from
the low-cost TLC27L2 (10 mV) to the high-precision TLC27L7 (500
µV). These advantages, in combination with good common-mode
rejection and supply voltage rejection, make these devices a good
choice for new state-of-the-art designs as well as for upgrading
existing designs.
In general, many features associated with bipolar technology are
available in LinCMOS operational amplifiers, without the power
penalties of bipolar technology. General applications such as
transducer interfacing, analog calculations, amplifier blocks,
active filters, and signal buffering are easily designed with the
TLC27L2 and TLC27L7. The devices also exhibit low voltage
single-supply operation and ultra-low power consumption, making
them ideally suited for remote and inaccessible battery-powered
applications. The common-mode input voltage range includes the
negative rail.
A wide range of packaging options is available, including
small-outline and chip-carrier versions for high-density system
applications.
The device inputs and outputs are designed to withstand –100-mA
surge currents without sustaining latch-up.
The TLC27L2 and TLC27L7 incorporate internal ESD-protection
circuits that prevent functional failures at voltages up to 2000 V
as tested under MIL-STD-883C, Method 3015.2; however, care should
be exercised in handling these devices as exposure to ESD may
result in the degradation of the device parametric performance.
The C-Suffix devices are characterized for operation from 0°C to
70°C. The I-suffix devices are characterized for operation from
–40°C to 85°C. The M-suffix devices are characterized for operation
over the full military temperature range of –55°C to 125°C.
equivalent schematic (each amplifier)
