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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

Anterwell Technology Ltd.
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    Buy cheap IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer from wholesalers
     
    Buy cheap IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer from wholesalers
    • Buy cheap IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer from wholesalers

    IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

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    Brand Name : ANTERWELL
    Model Number : 2SK3797
    Certification : Original Factory Pack
    Price : negotiate
    Payment Terms : T/T, Western Union,Paypal
    Supply Ability : 2500
    Delivery Time : Stock Offer
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    IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer

    IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer


    2SK3797 Field Effect Transistor Silicon N-Channel MOS Type


    Switching Regulator Applications

    • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)

    • High forward transfer admittance: |Yfs| = 7.5 S (typ.)

    • Low leakage current: IDSS = 100 μA (VDS = 600 V)

    • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


    Maximum Ratings (Ta = 25°C)


    CharacteristicSymbolRatingUnit
    Drain-source voltageVDSS600V
    Drain-gate voltage (RGS = 20 kΩ)VDGR600V
    Gate-source voltageVGSS±30V

    Drain current DC

    Pulse (t = 1 ms)

    ID13A
    IDP52
    Drain power dissipation (Tc = 25°C)PD50W
    Single pulse avalanche energyEAS1033mJ
    Avalanche currentAR13A
    Repetitive avalanche energyEAR5.0mJ
    Channel temperatureTch150°C
    Storage temperature rangeTstg-50-150°C

    Thermal Characteristics

    CharacteristicSymbolMaxUnit
    Thermal resistance, channel to caseRth (ch-c)2.5w/ °C
    Thermal resistance, channel to abinentRth (ch-a)62.5w/ °C

    Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.

    Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω

    Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.



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