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HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS2109

Anterwell Technology Ltd.
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    Buy cheap HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS2109 from wholesalers
     
    Buy cheap HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS2109 from wholesalers
    • Buy cheap HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS2109 from wholesalers

    HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS2109

    Ask Lasest Price
    Brand Name : IRF
    Model Number : IRS2109
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal
    Supply Ability : 5200PCS
    Delivery Time : 1 Day
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    HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS2109


    IRS21091(S)PbF

    HALF-BRIDGE DRIVER


    Features


    · Floating channel designed for bootstrap operation

    · Fully operational to +600 V

    · Tolerant to negative transient voltage, dV/dt immune

    · Gate drive supply range from 10 V to 20 V

    · Undervoltage lockout for both channels

    · 3.3 V, 5 V, and 15 V input logic compatible

    · Cross-conduction prevention logic

    · Matched propagation delay for both channels

    · High-side output in phase with IN input

    · Logic and power ground +/- 5 V offset

    · Internal 500 ns deadtime,

    and programmable up to 5 µs with one external RDT resistor

    · Lower di/dt gate driver for better noise immunity

    · The dual function DT/SD input turns off both channels

    · RoHS compliant


    Description


    The IRS21091 is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.


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