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New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

Anterwell Technology Ltd.
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    Buy cheap New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 from wholesalers
     
    Buy cheap New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 from wholesalers
    • Buy cheap New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 from wholesalers
    • Buy cheap New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893 from wholesalers

    New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

    Ask Lasest Price
    Brand Name : Anterwell
    Model Number : 2N1893
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union,Paypal
    Supply Ability : 8000
    Delivery Time : 1 day
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    New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

    New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
    Maximum Ratings

    RATINGSYMBOLMAX.

    UNIT

    Collector-Emitter VoltageVCEO80Vdc
    Collector-Emitter VoltageVCER100Vdc
    Collector-Base VoltageVCBO120Vdc
    Emitter-Base VoltageVEBO7.0Vdc
    Collector Current - ContinuousIC0.5Adc
    Total Device Dissipation @ T A = 25oC Derate above 25oCPD

    0.8
    4.57

    Watt mW/oC
    Total Device Dissipation @ T C = 25oC Derate above 25oCPD

    3.0
    17.2

    Watt mW/oC
    Operating Temperature RangeTJ-55 to +200oC
    Storage Temperature RangeTS-55 to +200oC
    Thermal Resistance, Junction to AmbientRqJA219oC/W
    Thermal Resistance, Junction to CaseRqJA58oC/W


    Mechanical Outline

    Electrical Parameters (TA @ 25°C unless otherwise specified)
    CHARACTERISTICSSYMBOLMIN.TYP.MAX.UNIT
    Off Characteristics
    Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1)BVCER100--
    Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1)BVCEO80--
    Collector-Base Breakdown Voltage (I C = 100 mAdc, IE = 0)BV(BR)CBO120--Vdc
    Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0)BV(BR)CBO7.0--
    Collector Cutoff Current (V CB = 90 Vdc, IE = 0) (V CB = 90 Vdc, IE = 0, TA = 150o C)ICBO

    --
    --

    0.01
    15

    mAdc
    Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)IEBO

    --

    0.01mAdc
    On Characteristics
    D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (I C = 10mAdc, VCE = 10 Vdc)(1) (I C = 10mAdc, VCE = 10 Vdc, TA = -55o C)(1) (I C = 150mAdc, VCE = 10 Vdc)(1)hFE

    20
    35
    20
    40

    --
    --
    --
    120

    --
    Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc)VCE(Sat)--0.5Vdc
    Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc)VCE(Sat)--1.3Vdc
    Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)/hfe/310
    Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz)COBO515pF
    Input Impedance = (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz)hib4.08.0Ohms
    Voltage Feedback Ratio (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hrb--1.5X 10-4
    Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz) (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hfe

    35
    45

    100
    --

    --
    Output Admittance (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hob

    --
    --

    0.5mmho
    Pulse response (Vcc = 20Vdc, Ic = 500mAdc)ton + tof--30ns


    (1) Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%.



















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