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Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

Anterwell Technology Ltd.
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    Buy cheap Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 from wholesalers
     
    Buy cheap Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 from wholesalers
    • Buy cheap Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 from wholesalers

    Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

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    Brand Name : Anterwell
    Model Number : 2N6038
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 10000
    Delivery Time : 1 day
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    Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038

    Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038


    Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications.


    • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc

    • Collector–Emitter Sustaining Voltage — @ 100 mAdc

    VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc

    (Min) — 2N6036, 2N6039

    • Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc

    • Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication

    • Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package


    MAXIMUM RATINGS

    RatingSymbolValueUnit

    Collector−Emitter Voltage 2N6034

    2N6035, 2N6038

    2N6036, 2N6039

    VCEO

    40

    60

    80

    Vdc

    Collector−Base Voltage 2N6034

    2N6035, 2N6038

    2N6036, 2N6039

    VCBO

    40

    60

    80

    Vdc
    Emitter−Base VoltageVEBO5.0Vdc

    Collector Current Continuous

    Peak

    IC

    4.0

    8.0

    Adc

    Apk

    Base CurrentIB100mAdc

    Total Device Dissipation @ TC = 25°C

    Derate above 25°C

    PD

    40

    320

    W

    mW/°C

    Total Device Dissipation @ TC = 25°C

    Derate above 25°C

    PD

    1.5

    12

    W

    mW/°C

    Operating and Storage Junction Temperature RangeTJ, Tstg–65 to +150°C

    THERMAL CHARACTERISTICS

    CharacteristicSymbolMaxUnit
    Thermal Resistance, Junction−to−CaseRJC3.12°C/W
    Thermal Resistance, Junction−to−AmbientRJA83.3°C/W

    Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


    ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

    CharacteristicSymbolMinMaxUnit
    OFF CHARACTERISTICS

    Collector−Emitter Sustaining Voltage

    (IC = 100 mAdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039

    VCEO(sus)

    40

    60

    80

    --

    --

    --

    Vdc

    Collector−Cutoff Current

    (VCE = 40 Vdc, IB = 0) 2N6034

    (VCE = 60 Vdc, IB = 0) 2N6035, 2N6038

    (VCE = 80 Vdc, IB = 0) 2N6036, 2N6039

    ICEO

    --

    --

    --

    100

    100

    100

    uA

    Collector−Cutoff Current

    (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034

    (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038

    (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039

    (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6034

    (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035, 2N6038

    (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6036, 2N6039

    ICEX

    --

    --

    --

    --

    --

    --

    100

    100

    100

    500

    500

    500

    uA

    Collector−Cutoff Current

    (VCB = 40 Vdc, IE = 0) 2N6034

    (VCB = 60 Vdc, IE = 0) 2N6035, 2N6038

    (VCB = 80 Vdc, IE = 0) 2N6036, 2N6039

    ICBO

    --

    --

    --

    0.5

    0.5

    0.5

    mAdc
    Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0)IEBO--2.0mAdc
    ON CHARACTERISTICS

    DC Current Gain

    (IC = 0.5 Adc, VCE = 3.0 Vdc)

    (IC = 2.0 Adc, VCE = 3.0 Vdc)

    (IC = 4.0 Adc, VCE = 3.0 Vdc)

    hFE

    500

    750

    100

    --

    15,000

    --

    --

    Collector−Emitter Saturation Voltage

    (IC = 2.0 Adc, IB = 8.0 mAdc)

    (IC = 4.0 Adc, IB = 40 mAdc)

    VCE(sat)

    --

    --

    2.0

    3.0

    Vdc

    Base−Emitter Saturation Voltage

    (IC = 4.0 Adc, IB = 40 mAdc)

    VBE(sat)--4.0Vdc

    Base−Emitter On Voltage

    (IC = 2.0 Adc, VCE = 3.0 Vdc)

    VBE(on)--2.8Vdc
    DYNAMIC CHARACTERISTICS

    Small−Signal Current−Gain

    (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

    |hfe|25----

    Output Capacitance

    (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036 2N6038, 2N6039

    Cob

    --

    --

    200

    100

    pF

    *Indicates JEDEC Registered Data.




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