TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP523, TLP523−2, TLP523−4

Programmable Controllers DC−Output Module Solid State Relay

The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics.

The TLP523−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP523−4 provide four isolated channels per package.

* Current transfer ratio: 500% (min.) (IF = 1 mA)

* Isolation voltage: 2500 Vrms (min.)

* Collector−emitter voltage: 55 V (min.)

* Leakage current: 10µA (max.) (Ta = 85°C)

* UL recognized: UL1577, file no. E67349 Pin

Pin Configurations (top view)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

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