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NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

    Buy cheap NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200 from wholesalers
     
    Buy cheap NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200 from wholesalers
    • Buy cheap NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200 from wholesalers

    NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200

    Ask Lasest Price
    Brand Name : Anterwell
    Model Number : 2SC5200
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 10000pcs
    Delivery Time : 1 day
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    NPN Epitaxial Silicon Transistor Power Mosfet Transistor 2SC5200


    2SC5200/FJL4315

    NPN Epitaxial Silicon Transistor


    Applications

    • High-Fidelity Audio Output Amplifier

    • General Purpose Power Amplifier


    Features

    • High Current Capability: IC = 15A.

    • High Power Dissipation : 150watts.

    • High Frequency : 30MHz.

    • High Voltage : VCEO=230V

    • Wide S.O.A for reliable operation.

    • Excellent Gain Linearity for low THD.

    • Complement to 2SA1943/FJL4215.

    • Thermal and electrical Spice models are available.

    • Same transistor is also available in:

    -- TO3P package, 2SC5242/FJA4313 : 130 watts

    -- TO220 package, FJP5200 : 80 watts

    -- TO220F package, FJPF5200 : 50 watts


    Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

    SymbolParameterRatingsUnits
    BVCBOCollector-Base Voltage230V
    BVCEOCollector-Emitter Voltage230V
    BVEBOEmitter-Base Voltage5V
    ICCollector Current(DC)15A
    IBBase Current1.5A
    PD

    Total Device Dissipation(TC=25°C)

    Derate above 25°C

    150

    1.04

    W

    W/°C

    TJ, TSTGJunction and Storage Temperature- 50 ~ +150°C

    * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.


    Thermal Characteristics* Ta=25°C unless otherwise noted

    SymbolParameterMaxUnits
    RθJCThermal Resistance, Junction to Case0.83°C/W

    * Device mounted on minimum pad size


    hFE Classification

    ClassificationRO
    hFE155 ~ 11080 ~ 160

    Typical Characteristics


    Package Dimensions


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