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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

Anterwell Technology Ltd.
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    Buy cheap TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127 from wholesalers
     
    Buy cheap TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127 from wholesalers
    • Buy cheap TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127 from wholesalers

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

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    Brand Name : TOSHIBA
    Model Number : 30J127
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal
    Supply Ability : 5200PCS
    Delivery Time : 1 Day
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    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Silicon N Channel IGBT High Power Switching 30J127

    TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

    GT30J121


    High Power Switching Applications

    Fast Switching Applications


    • The 4th generation

    • Enhancement-mode

    • Fast switching (FS):

    Operating frequency up to 50 kHz (reference)

    High speed: tf = 0.05 µs (typ.)

    Low switching loss : Eon = 1.00 mJ (typ.)

    : Eoff = 0.80 mJ (typ.)


    • Low saturation voltage: VCE (sat) = 2.0 V (typ.)


    Maximum Ratings (Ta = 25°C)

    CharacteristicsSymbolRatingUnit
    Collector-emitter voltageVCES600V
    Gate-emitter voltageVGES±20V
    Collector power dissipation (Tc = 25°C)PC170W
    Junction temperatureTj150°C
    Storage temperature rangeTstg−55 to 150°C

    Switching time measurement circuit and input/output waveforms

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