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Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Anterwell Technology Ltd.
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    Buy cheap Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611 from wholesalers
     
    Buy cheap Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611 from wholesalers
    • Buy cheap Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611 from wholesalers

    Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

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    Brand Name : Anterwell
    Model Number : 2SK2611
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 10000pcs
    Delivery Time : 1 day
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    Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611


    TOSHIBA Field Effect Transistor

    Silicon N Channel MOS Type (π−MOSIII) 2SK2611


    DC−DC Converter, Relay Drive and Motor Drive Applications


    * Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)

    * High forward transfer admittance : |Yfs| = 7.0 S (typ.)

    * Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

    * Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



    Weight: 4.6 g (typ.)


    Absolute Maximum Ratings (Ta = 25°C)

    CharacteristicsSymbolRatingUnit
    Drain−source voltageVDSS900V
    Drain−gate voltage (RGS = 20 kΩ)VDGR900V
    Gate−source voltageVGSS±30V
    Drain currentDC (Note 1)ID9A
    Pulse (Note 1)IDP27A
    Drain power dissipation (Tc = 25°C)PD150W
    Single pulse avalanche energy (Note 2)EAS663mJ
    Avalanche currentIAR9A
    Repetitive avalanche energy (Note 3)EAR15mJ
    Channel temperatureTch150°C
    Storage temperature rangeTstg−55~150°C

    Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


    Thermal Characteristics

    CharacteristicsSymbolMaxUnit
    Thermal resistance, channel to caseRth (ch−c)0.833°C / W
    Thermal resistance, channel to ambientRth (ch−a)50°C / W

    Note 1: Please use devices on condition that the channel temperature is below 150°C.

    Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A

    Note 3: Repetitive rating: Pulse width limited by maximum channel temperature


    This transistor is an electrostatic sensitive device.

    Please handle with caution.


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