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N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP

Anterwell Technology Ltd.
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    Buy cheap N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP from wholesalers
     
    Buy cheap N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP from wholesalers
    • Buy cheap N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP from wholesalers

    N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP

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    Brand Name : Anterwell
    Model Number : STP10NK80ZFP
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7200pcs
    Delivery Time : 1 day
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    N - CHANNEL Zener Protected SuperMESH ⑩ Power Mosfet Transistor STP10NK80ZFP


    STP10NK80Z - STP10NK80ZFP
    STW10NK80Z

    N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET

    TYPEVDSSRDS(on)IDPw

    STP10NK80Z

    STP10NK80ZFP

    STW10NK80Z

    800 V

    800 V

    800 V

    < 0.90 Ω

    < 0.90 Ω

    < 0.90 Ω

    9 A

    9 A

    9 A

    160 W

    40 W

    160 W


    ■ TYPICAL RDS(on) = 0.78 Ω
    ■ EXTREMELY HIGH dv/dt CAPABILITY
    ■ 100% AVALANCHE TESTED
    ■ GATE CHARGE MINIMIZED
    ■ VERY LOW INTRINSIC CAPACITANCES
    ■ VERY GOOD MANUFACTURING REPEATIBILITY

    DESCRIPTION
    The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

    APPLICATIONS
    ■ HIGH CURRENT, HIGH SPEED SWITCHING
    ■ SWITCH MODE POWER SUPPLIES
    ■ DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

    ABSOLUTE MAXIMUM RATINGS

    SymbolParameterValueUnit
    STP10NK80ZSTP10NK80ZFPSTW10NK80Z
    VDSDrain-source Voltage (VGS = 0)800V
    VDGRDrain-gate Voltage (RGS = 20 kΩ)800V
    VGSGate- source Voltage± 30V
    IDDrain Current (continuous) at TC = 25°C99 (*)9A
    IDDrain Current (continuous) at TC = 100°C66 (*)6A
    IDM (•)Drain Current (pulsed)3636 (*)36A
    PTOTTotal Dissipation at TC = 25°C16040160W
    Derating Factor1.280.321.28W/°C
    VESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5KΩ)4KV
    dv/dt (1)Peak Diode Recovery voltage slope4.5V/ns
    VISOInsulation Withstand Voltage (DC)-2500-V

    Tj

    Tstg

    Operating Junction Temperature

    Storage Temperature

    -55 to 150

    -55 to 150

    °C

    (•) Pulse width limited by safe operating area
    (1) ISD ≤9A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
    (*) Limited only by maximum temperature allowed




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