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K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

Anterwell Technology Ltd.
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    Buy cheap K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM from wholesalers
     
    Buy cheap K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM from wholesalers
    • Buy cheap K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM from wholesalers

    K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM

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    Brand Name : Anterwell
    Model Number : K6R1008V1D-TI10
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8600pcs
    Delivery Time : 1 day
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    K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM


    256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).


    FEATURES

    • Fast Access Time 10ns(Max.)

    • Power Dissipation

    Standby (TTL) : 20mA(Max.)

    (CMOS) : 5mA(Max.)

    Operating K6R1004C1D-10: 65mA(Max.)

    • Single 5.0V±10% Power Supply

    • TTL Compatible Inputs and Outputs

    • I/O Compatible with 3.3V Device

    • Fully Static Operation - No Clock or Refresh required

    • Three State Outputs

    • Center Power/Ground Pin Configuration

    • Standard Pin Configuration :

    K6R1004C1C-J : 32-SOJ-400

    K6R1004C1C-K : 32-SOJ-400(Lead-Free)

    • Operating in Commercial and Industrial Temperature range.


    GENERAL DESCRIPTION

    The K6R1004C1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004C1D is packaged in a 400 mil 32-pin plastic SOJ.


    ABSOLUTE MAXIMUM RATINGS*

    ParameterSymbolRatingUnit
    Voltage on Any Pin Relative to VSSVIN, VOUT-0.5 to Vcc+0.5VV
    Voltage on VCC Supply Relative to VSSVCC-0.5 to 7.0V
    Power DissipationPd1W
    Storage TemperatureTSTG-65 to 150°C
    Operating TemperatureCommercialTA0 to 70°C
    IndustrialTA-40 to 85°C

    * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


    FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATION(Top View)


    PACKAGE DIMENSIONS

    32-SOJ-400 Units:millimeters/Inches


    Quality K6R1008V1D-TI10 complementary power mosfet Power Mosfet Transistor 256Kx4 Bit High-Speed CMOS Static RAM for sale
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