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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

Anterwell Technology Ltd.
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    Buy cheap BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs from wholesalers
     
    Buy cheap BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs from wholesalers
    • Buy cheap BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs from wholesalers

    BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

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    Brand Name : Anterwell
    Model Number : BTA40-600B
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7600pcs
    Delivery Time : 1 day
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    BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs


    BTA40, BTA41 and BTB41 Series
    40A TRIACS

    Main Features

    SymbolValueUnit
    IT(RMS)40A
    VDRM/VRRM600 and 800V
    IGT (Q1)50mA


    DESCRIPTION
    Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...
    Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
    By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734).

    Absolute Maximum Ratings

    SymbolParameterValueUnit
    IT(RMS)RMS on-state current (full sine wave)RD91 / TOP3Tc = 95°C40A
    TOP Ins.Tc = 80°C
    ITSMNon repetitive surge peak on-state current (full cycle, Tj initial = 25°C)F = 50 Hzt = 20 ms400A
    F = 60 Hzt = 16.7 ms420
    I² tI² t Value for fusing

    tp = 10 ms

    880A² s
    dI/dtCritical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 nsF = 120 HzTj = 125°C50A/µs
    VDSM/VRSMNon repetitive surge peak off-state voltagetp = 10 msTj = 25°C

    VDSM/VRSM

    + 100

    V
    IGMPeak gate currenttp = 20 µsTj = 125°C8A
    PG(AV)Average gate power dissipationTj = 125°C1W

    Tstg

    Tj

    Storage junction temperature range

    Operating junction temperature range

    - 40 to + 150

    - 40 to + 125

    °C




    TOP3 (Insulated and non insulated) Package Mechanical Data


    RD91 Package Mechanical Data



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