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MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier

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    Buy cheap MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier from wholesalers
     
    Buy cheap MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier from wholesalers
    • Buy cheap MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier from wholesalers
    • Buy cheap MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier from wholesalers

    MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier

    Ask Lasest Price
    Brand Name : Micrel
    Model Number : MIC4423YM
    Certification : Original Factory Pack
    Price : Negotiation
    Payment Terms : T/T, Western Union,PayPal
    Supply Ability : 1000PCS
    Delivery Time : 1 Day
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    MIC4423YM SOP-8 Programmable IC Chips Electronics China Golden IC Supplier

    MIC4423YM

    Dual 3A-Peak Low-Side MOSFET Driver


    General Description

    The MIC4423/4424/4425 family are highly reliable BiCMOS/ DMOS buffer/driver/MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428, which are improved versions of the MIC426/427/428. All three families are pin-compatible. The MIC4423/4424/4425 drivers are capable of giving reliable service in more demanding electrical environments than their predecessors. They will not latch under any conditions within their power and voltage ratings. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. The MIC4423/4424/4425 series drivers are easier to use, more flexible in operation, and more forgiving than other CMOS or bipolar drivers currently available. Their BiCMOS/DMOS construction dissipates minimum power and provides rail-torail voltage swings. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package


    Features

    • Reliable, low-power bipolar/CMOS/DMOS construction

    • Latch-up protected to >500mA reverse current

    • Logic input withstands swing to –5V

    • High 3A-peak output current

    • Wide 4.5V to 18V operating range

    • Drives 1800pF capacitance in 25ns

    • Short <40ns typical delay time

    • Delay times consistent with in supply voltage change

    • Matched rise and fall times

    • TTL logic input independent of supply voltage

    • Low equivalent 6pF input capacitance

    • Low supply current 3.5mA with logic-1 input 350µA with logic-0 input

    • Low 3.5Ω typical output impedance

    • Output voltage swings within 25mV of ground or VS.

    • ‘426/7/8-, ‘1426/7/8-, ‘4426/7/8-compatible pinout

    • Inverting, noninverting, and differential configurations


    Absolute Maximum Ratings (Note 1)

    Supply Voltage ........................................................... +22V

    Input Voltage ..................................VS + 0.3V to GND – 5V

    Junction Temperature ................................................150°C

    Storage Temperature Range ......................–65°C to 150°C

    Lead Temperature (10 sec.) ......................................300°C

    ESD Susceptability, Note 3 ..................................... 1000V


    Operating Ratings (Note 2)

    Supply Voltage (VS) ......................................+4.5V to +18V

    Temperature Range C Version ....................................................0°C to +70°C

    B Version ................................................–40°C to +85°C

    Package Thermal Resistance DIP θJA ............................................................. 130°C/W

    DIP θJC ............................................................... 42°C/W

    Wide-SOIC θJA ................................................. 120°C/W

    Wide-SOIC θJC ................................................... 75°C/W

    SOIC θJA ........................................................... 120°C/W

    SOIC θJC ............................................................ 75°C/W


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