HY6264A Series 8Kx8bit CMOS SRAM

DESCRIPTION

The HY6264A is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns. The HY6264A has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltage from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. Reducing the supply voltage to minimize current drain is unnecessary for the HY6264A Series.

FEATURES

· Fully static operation and Tri-state outputs

· TTL compatible inputs and outputs

· Low power consumption

· Battery backup(L/LL-part)

-2.0V(min.) data retention

· Standard pin configuration

-28 pin 600 mil PDIP

-28 pin 330 mil SOP

ABSOLUTE MAXIMUM RATING ⁽¹⁾

Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for an extended period may affect reliability.

ORDERING INFORMATION

PIN CONNECTION BLOCK DIAGRAM

PACKAGE INFORMATION

28pin 600mil Dual In-Line Package(P)

28pin 330mil Small Outline Package(J)

Stock Offer (Hot Sell)

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