TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

(Four Darlington Power Transistors in One)

MP4104

High Power Switching Applications

Hammer Drive, Pulse Motor Drive and Inductive Load Switching

• Small package by full molding (SIP 10 pins)

• High collector power dissipation (4-device operation) : P_T = 4 W (Ta = 25°C)

• High collector current: I_{C (DC)} = 4 A (max)

• High DC current gain: h_FE = 2000 (min) (V_CE = 2 V, I_C = 1.5 A)

Absolute Maximum Ratings (Ta = 25°C)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Industrial Applications Unit: mm

Weight: 2.1 g (typ.)

Array Configuration

Marking

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