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1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component

Anterwell Technology Ltd.
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    Buy cheap 1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component from wholesalers
     
    Buy cheap 1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component from wholesalers
    • Buy cheap 1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component from wholesalers

    1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component

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    Brand Name : SST
    Model Number : SST25VF016B-50-4I-S2AF
    Certification : Original
    Price : 0.1USD
    Payment Terms : T/T, Western Union,Paypal
    Supply Ability : 10000PCS/DAY
    Delivery Time : 1 day
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    1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component

    1N5358B Silicon-Power-Zener Diodes
    Silicon-Power-Zener Diodes (non-planar technology)
    Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden)
    Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung
    Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0
    Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
    Standard Zener voltage tolerance is ±5%). Other voltage tolerances and higher Zener voltages on request.
    Die Toleranz der Zener-Spannung ist in der Standard-Ausführung ±5%. Andere Toleranzen oder höhere
    Arbeitsspannungen auf Anfrage.
    Power dissipation Verlustleistung
    Ptot
    5 W 1)
    Non repetitive peak power dissipation, t < 10 ms
    Einmalige Impuls-Verlustleistung, t < 10 ms
    PZSM
    80 W
    Operating junction temperature – Sperrschichttemperatur
    Storage temperature – Lagerungstemperatur
    Tj
    TS
    -50...+150°C
    -50...+175°C
    Thermal resistance junction to ambient air
    Wärmewiderstand Sperrschicht – umgebende Luft
    RthA
    < 25 K/W 1)
    Thermal resistance junction to terminal
    Wärmewiderstand Sperrschicht – Anschluss
    RthL<8 K/W

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