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K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

Anterwell Technology Ltd.
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    Buy cheap K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification from wholesalers
     
    Buy cheap K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification from wholesalers
    • Buy cheap K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification from wholesalers

    K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

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    Brand Name : Anterwell
    Model Number : K4H561638H-UCB3
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 7700pcs
    Delivery Time : 1 day
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    K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification


    K4H560438H K4H560838H K4H561638H

    256Mb H-die DDR SDRAM Specification


    66 TSOP-II with Pb-Free (RoHS compliant)


    Key Features

    • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333

    • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400

    • Double-data-rate architecture; two data transfers per clock cycle

    • Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)

    • Four banks operation

    • Differential clock inputs(CK and CK)

    • DLL aligns DQ and DQS transition with CK transition


    • MRS cycle with address key programs

    -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)

    -. Burst length (2, 4, 8)

    -. Burst type (sequential & interleave)

    • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

    • Data I/O transactions on both edges of data strobe

    • Edge aligned data output, center aligned data input


    • LDM,UDM for write masking only (x16)

    • DM for write masking only (x4, x8)

    • Auto & Self refresh

    • 7.8us refresh interval(8K/64ms refresh)

    • Maximum burst refresh cycle : 8

    • 66pin TSOP II Pb-Free package

    • RoHS compliant


    General Description

    The K4H560438H / K4H560838H / K4H561638H is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.


    Absolute Maximum Rating

    ParameterSymbolValueUnit
    Voltage on any pin relative to VSSVIN, VOUT-0.5 ~ 3.6V
    Voltage on VDD & VDDQ supply relative to VSSVDD, VDDQ-1.0 ~ 3.6V
    Storage temperatureTSTG-55 ~ +150°C
    Power dissipationPD1.5W
    Short circuit currentIOS50mA

    Note :

    Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

    Functional operation should be restricted to recommend operation condition.

    Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


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