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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

    Buy cheap GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR from wholesalers
     
    Buy cheap GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR from wholesalers
    • Buy cheap GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR from wholesalers

    GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

    Ask Lasest Price
    Brand Name : Anterwell
    Model Number : GP4068D
    Certification : new & original
    Price : Negotiate
    Payment Terms : T/T, Western Union, Paypal
    Supply Ability : 8700pcs
    Delivery Time : 1 day
    • Product Details
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    GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR


    IRGP4068DPbF

    IRGP4068D-EPbF


    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS


    Features

    • Low VCE (ON) Trench IGBT Technology

    • Low Switching Losses

    • Maximum Junction temperature 175 °C

    • 5 µS short circuit SOA

    • Square RBSOA

    • 100% of the parts tested for 4X rated current (ILM)

    • Positive VCE (ON) Temperature co-efficient

    • Ultra-low VF Hyperfast Diode

    • Tight parameter distribution

    • Lead Free Package


    Benefits

    • Device optimized for induction heating and soft switching applications

    • High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF

    • Rugged transient Performance for increased reliability

    • Excellent Current sharing in parallel operation

    • Low EMI


    Absolute Maximum Ratings

    ParameterMaxUnits
    VCESCollector-to-Emitter Voltage600V
    IC @ TC = 25°CContinuous Collector Current96A
    IC @ TC = 100°CContinuous Collector Current48A
    ICMPulse Collector Current192A
    ILMClamped Inductive Load Current192A
    IF @ TC = 160°CDiode Continous Forward Current8.0A
    IFSMDiode Non Repetitive Peak Surge Current @ TJ = 25°C175A
    IFMDiode Peak Repetitive Forward Current16A
    VGEContinuous Gate-to-Emitter Voltage±20V
    Transient Gate-to-Emitter Voltage±30V
    PD @ TC = 25°CMaximum Power Dissipation330W
    PD @ TC = 100°CMaximum Power Dissipation170W

    TJ

    TSTG

    Operating Junction and Storage Temperature Range-55 to +175°C
    Soldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)°C
    Mounting Torque, 6-32 or M3 Screw10 lbf·in (1.1 N·m)


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